Diodes DMN601DWK - Manual (Page 3)

DMN601DWK
Document number: DS30656 Rev. 7 - 2
3 of 5
www.diodes.com
January 2014
© Diodes Incorporated
DMN601DWK
NEW PROD
UC
T
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
V , DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
I,
D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
1.2
1.4
3V
4V
6V
8V
10V
V = 10V
8V
6V
5V
4V
3V
GS
5V
V , GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
GS
0.01
0.10
1.00
1 1.5 2 2.5 3 3.5 4 4.5 5
I, D
D
R
AI
N
C
U
R
R
EN
T
(A
)
T = 125 C °
A
T = 25 C
A
°
T = -25 C °
A
T = 75 C °
A
V = 10V
Pulsed
DS
T , CHANNEL TEMPERATURE (°C)
Figure 3 Gate Threshold Voltage vs. Channel Temperature
CH
0
0.5
1
1.5
2
-50 -25 0 25 50 75 100 125 150
V
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
(t
h
),
V = 10V
I = 1mA
Pulsed
DS
D
0.1
I DRAIN CURRENT (A)
Figure 4 Static Drain-Source On-Resistance vs. Drain Current
D,
1
10
0.001 0.01 0.1 1
T = 150 C °
A
T = 125 C
A
° T = 85 C °
A
T = -55 C °
A
T = 25 C °
A
T = 0 C °
A
T = -25 C °
A
V = 10V
Pulsed
GS
R
, S
TA
T
IC
D
R
AI
N S
O
U
R
C
E
O
N
-R
ESI
S
TANCE (
)
DS
(O
N
)

1
I , DRAIN CURRENT (A)
Figure 5 Static Drain-Source On-Resistance vs. Drain Current
D
10
0.1
1
0.001 0.01 0.1
V = 5V
Pulsed
GS
T = 150 C
A
°
T = 125 C
A
° T = 85°C
A
T = 25 C
A
° T = -25 C
A
° T = 0 C
A
°
R
, ST
A
T
IC
D
R
AIN-
S
O
URCE
O
N
-R
ESI
S
TANCE (
)
D
S
(on)

0
V GATE SOURCE VOLTAGE (V)
Figure 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
GS,
1
2
3
4
5
6
7
0 2 4 6 8 10 12 14 16 18 20
I = 300mA
D
I = 150mA
D
T = 25°C
Pulsed
A
R
, S
TA
T
IC
D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
ST
ANCE (
)
D
S
(on)
