Diodes DMN6066SSD - Manual (Page 2)

DMN6066SSD
Document Number DS32109 Rev 3 - 2
2 of 9
www.diodes.com
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN6066SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V DSS
60 V
Gate-Source voltage (Note 2) V
GS
±20 V
Single Pulsed Avalanche Energy (Note 9) E
AS
37.5 mJ
Single Pulsed Avalanche Current (Note 9) I
AS
5.0 A
Continuous Drain current V
GS
= 10V
(Note 4)
I
D
4.4
A T
A
= 70°C (Note 4) 3.5
(Note 3) 3.3
Pulsed Drain current V GS = 10V (Note 5) I DM
17.0 A
Continuous Source current (Body diode) (Note 4) I
S
3.2 A
Pulsed Source current (Body diode) (Note 5) I
SM
17.0 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Notes 3 & 6)
P
D
1.25
10
W
mW/ °C
(Notes 3 & 7)
1.8
14.3
(Notes 4 & 6)
2.14
17.2
Thermal Resistance, Junction to Ambient
(Notes 3 & 6)
R θJA
100
°C/W
(Notes 3 & 7) 70
(Notes 4 & 6) 58
Thermal Resistance, Junction to Lead (Notes 6 & 8) R θJL 55
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes: 2. AEC-Q101 V
GS
maximum is ±16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t
≤ 10 sec.
5. Same as note (3), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.
6. For a dual device with one active die.
7. For a device with two active die running at equal power.
8. Thermal resistance from junction to solder-point (at the end of the drain lead).
9. UIS in production with L = 3.0mH, I
AS
= 5.0A, R
G
= 25 Ω, V
DD
= 50V, starting T
J
= 25°C.