Diodes DMN6066SSD - Manual (Page 4)

DMN6066SSD
Document Number DS32109 Rev 3 - 2
4 of 9
www.diodes.com
December 2011
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMN6066SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V I
D
= 250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ 0.5 μA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V GS(th)
1.0 ⎯ 3.0 V I D = 250
μA, V
DS = V GS
Static Drain-Source On-Resistance (Note 10) R DS (ON)
⎯
0.048 0.066
Ω
V
GS
= 10V, I
D
= 4.5A
0.068 0.097 V
GS
= 4.5V, I
D
= 3.5A
Forward Transconductance (Notes 10 & 11) g fs
⎯ 19.2 ⎯ S V DS = 15V, I D = 6A
Diode Forward Voltage (Note 10) V
SD
⎯ 0.89 1.15 V I
S
= 4.5A, V
GS
= 0V
Reverse recovery time (Note 11) t
rr
22.2 ⎯ ns
I
S
= 1.9A, di/dt= 100A/
μs
Reverse recovery charge (Note 11) Q
rr
⎯ 16.9 ⎯ nC
DYNAMIC CHARACTERISTICS (Note 11)
Input Capacitance
C
iss
⎯ 502 ⎯ pF
V
DS
= 30V, V
GS
= 0V
f= 1MHz
Output Capacitance C
oss
⎯ 45.7 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 27.1 ⎯ pF
Total Gate Charge (Note 12) Q
g
⎯ 5.4 ⎯ nC V
GS
= 4.5V
V
DS
= 30V
I
D
= 4.5A
Total Gate Charge (Note 12) Q
g
⎯ 10.3 ⎯ nC
V GS = 10V Gate-Source Charge (Note 12) Q gs
⎯ 1.7 ⎯ nC
Gate-Drain Charge (Note 12) Q
gd
⎯ 3.2 ⎯ nC
Turn-On Delay Time (Note 12) t
D(on)
⎯ 2.7 ⎯ ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 12) t r
⎯ 2.4 ⎯ ns
Turn-Off Delay Time (Note 12) t
D(off)
⎯ 14.7 ⎯ ns
Turn-Off Fall Time (Note 12) t
f
⎯ 5.4 ⎯ ns
Notes: 10. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
11. For design aid only, not subject to production testing.
12. Switching characteristics are independent of operating junction temperatures.