Diodes DMN6069SE - Manual (Page 2)

DMN6069SE
D atasheet number: DS36474 Rev. 2 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN6069SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
I
D
4.3
3.3
A
T
C
= +25°C
T
C
= +70°C
I
D
10
8
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
25 A
Maximum Body Diode Continuous Current I
S
3.2 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T A = +25°C
P
D
2.2
W
T A = +70°C 1.4
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
58 °C/W
Total Power Dissipation (Note 5) P
D
11 W
Thermal Resistance, Junction to Case (Note 5) R
θJC
8.9 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60   V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
  1 μA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1  3 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
 47 69
mΩ
V
GS
= 10V, I
D
= 3A
 54 100 V
GS
= 4.5V, I
D
= 2.4A
Diode Forward Voltage V
SD
 0.8 1.1 V V
GS
= 0V, I
S
= 2.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 825 
pF
V
DS
= 30V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
 40 
Reverse Transfer Capacitance C
rss
 29 
Gate Resistance R
G
 2.3  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
 7.2 
nC  V
DS
= 30V, I
D
= 12A
Total Gate Charge (V
GS
= 10V) Q
g
 16 
Gate-Source Charge Q
gs
 3.2 
Gate-Drain Charge Q
gd
 2.8 
Turn-On Delay Time t
D(on)
 3.8 
nS
V
DD
= 30V, V
GS
= 10V,
R
G
= 6Ω, I
D
= 12A
Turn-On Rise Time t
r
 6.7 
Turn-Off Delay Time t
D(off)
 16 
Turn-Off Fall Time t
f
 5.3 
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.