Diodes DMN6069SE - Manual (Page 4)

DMN6069SE
D atasheet number: DS36474 Rev. 2 - 2
4 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMN6069SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.5
1
1.5
2
2.5
3
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J

I = 1mA
D
I = 250µA
D
V
, G
A
TE TH
RESHO
L
D VO
LT
AG
E
(
V
)
GS
(t
h
)
0
5
10
15
20
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0 10 20 30 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
C
iss
f = 1MHz
C
oss
C
rss
0
1
2
3
4
5
6
7
8
9
10
0 2 4 6 8 10 12 14 16 18
Q (nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = 30V
I = A
DS
D
12
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
r(t
),
T
R
AN
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
D = 0.5
D = 0.7
D = 0.9
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = Single Pulse
R (t) = r(t) * R
R = 94°C/W
Duty Cycle, D = t1/ t2
 

JA JA
JA