Diodes DMN6075S - Manual (Page 2)

DMN6075S
Document number: DS37023 Rev. 2 - 2
2 of 6
www.diodes.com
April 2014
© Diodes Incorporated
DMN6075S
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.0
1.5
A
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
2.5
2.0
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
12 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.8
W
T
A
= +70°C 0.5
Thermal Resistance, Junction to Ambient (Note 5) Steady State R
JA
157 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.15
W
T
A
= +70°C 0.7
Thermal Resistance, Junction to Ambient (Note 6) Steady State R
JA
110 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
60 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
— — 1.0 µA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1 — 3 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
—
69 85
mΩ
V
GS
= 10V, I
D
= 3.2A
75 120 V
GS
= 4.5V, I
D
= 2.8A
Diode Forward Voltage V
SD
— — 1.2 V V
GS
= 0V, I
S
= 2.5A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
— 606 — pF
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 32.6 — pF
Reverse Transfer Capacitance C
rss
— 24.6 — pF
Gate Resistance R
g
— 1.5 — Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
=10V) Q
g
— 12.3 — nC
V
DS
= 30V, I
D
= 3A
Total Gate Charge (V
GS
=4.5V) Q
g
— 5.6 — nC
Gate-Source Charge Q
gs
— 1.7 — nC
Gate-Drain Charge Q
gd
— 1.9 — nC
Turn-On Delay Time t
D(on)
— 3.5 — ns
V
GS
= 10V, V
DS
= 30V,
R
G
= 20Ω, R
L
= 50Ω
Turn-On Rise Time t
r
— 4.1 — ns
Turn-Off Delay Time t
D(off)
— 35 — ns
Turn-Off Fall Time t
f
— 11 — ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.