Diodes DMN62D0LFB - Manual (Page 2)

DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
2 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN62D0LFB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 4) V
GS
= 4.0V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
100
75
mA
Pulsed Drain Current (Note 5) I DM
200 mA
Thermal Characteristics
Characteristic Symbol Max Unit
Power Dissipation (Note 4) P
D
0.47 W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4) R θJA 258 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
@ T
A
= 25°C unless otherwise stated
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
60 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current T J = 25°C I DSS
- - 1.0 μA
V DS = 60V, V GS = 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±5V, V
DS
= 0V
- - ±500 nA V
GS
= ±10V, V
DS
= 0V
- - ±2.0 μA
V GS = ±15V, V DS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
0.6 - 1.0 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance R DS (ON)
- 1.3 2
Ω
V GS = 4V, I D = 100mA
- 1.5 2.5 V
GS
= 2.5V, I
D
= 50mA
- 1.9 3 V
GS
= 1.8V, I
D
= 50mA
- 2.6 - V GS = 1.5V, I D = 10mA
Forward Transfer Admittance |Y
fs
| - 0.8 - S V
DS
= 10V, I
D
= 200mA
Diode Forward Voltage V
SD
- 0.9 1.3 V V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
- 32 -
pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 4.4 -
Reverse Transfer Capacitance C rss
- 2.9 -
Gate Resistance R
g
- 126 - Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
- 0.45 -
nC
V GS = 4.5V, V DS = 10V,
I D = 250mA
Gate-Source Charge Q gs
- 0.08 -
Gate-Drain Charge Q
gd
- 0.08 -
Turn-On Delay Time t
D(on)
- 3.4 - ns
V
GS
= 10V, V
DS
= 30V,
R
L
= 150 Ω, R
G
= 25 Ω,
I
D
= 200mA
Turn-On Rise Time t r
- 3.4 - ns
Turn-Off Delay Time t
D(off)
- 26.4 - ns
Turn-Off Fall Time t
f
- 16.3 - ns
Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.