Diodes DMN62D0LFB User Manual
Page 4
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DMN62D0LFB
Document number: DS35409 Rev. 2 - 2
4 of 6
October 2011
© Diodes Incorporated
DMN62D0LFB
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
0.001
0.01
0.1
1
0.1
0.3
0.5
0.7
0.9
1.1
V
, SOURCE-DRAIN VOLTAGE (V)
SD
Fig. 7 Diodes Forward Voltage vs. Current
I (
A
)
S
0
5
10
15
20
25
30
35
40
45
50
55
60
0
5
10
15
20
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 8 Typical Junction Capacitance
C
, J
U
NCT
ION CAP
A
CIT
A
N
CE
(p
F
)
T
0
2
4
6
8
10
0
0.2
0.4
0.6
0.8
1
1.2
Q (nC)
G
Fig. 9 Gate Charge Characteristics
V (
V
)
GS
V
=10V, I =250mA
DS
D
0.001
0.01
0.1
1
0.1
1
10
100
V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 10 SOA, Safe Operation Area
I
, DRAIN
CURRENT
(
A
)
D
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 11 Transient Thermal Resistance
0.001
0.01
0.1
1
r(
t)
, T
R
ANSI
ENT T
H
ERM
A
L
RESI
ST
ANCE
r(t) @ D=0.005
r(t) @ D=Single Pulse
r(t) @ D=0.01
r(t) @ D=0.02
r(t) @ D=0.05
r(t) @ D=0.1
r(t) @ D=0.3
r(t) @ D=0.5
r(t) @ D=0.7
r(t) @ D=0.9
R
(t)=r(t) * R
θ
θ
JA
JA
R
=273 C/W
Duty Cycle, D=t1 / t2
θJA
°