Diodes DMN62D1SFB - Manual (Page 3)

DMN62D1SFB
Document number: DS35252 Rev. 3 - 2
3 of 6
www.diodes.com
April 2014
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
DMN62D1SFB
0
0.2
0.4
0.6
0.8
1.0
0 1 2 3 4 5
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AIN
C
U
R
R
EN
T
(A
)
D
V = 2.0V
GS
V = 2.5V
GS
V = 3.0V
GS
V = 4.0V
GS
V = 5.0V
GS
V = 10V
GS
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
D
Fig. 2 Typical On-Resistance vs. Drain Current and Temperature
0.1
1
10
R
, DRA
IN-
S
OURCE
ON-
R
ES
IST
A
NCE
(
)
DS
(O
N)

T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
GS
0.1
1
10
0 0.2 0.4 0.6 0.8 1.0
I , DRAIN CURRENT (A)
D
Fig. 3 Typical On-Resistance
vs. Drain Current and Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)

T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 10V
GS
0
0.5
1.0
1.5
2.0
2.5
3.0
Fig. 4 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DRAI
N
-S
O
U
R
C
E O
N
-R
ESI
ST
AN
CE (
)
DS
O
N

V = 10V
I = 150mA
GS
D
V = 10V
I = 300mA
GS
D
1.0
1.2
1.4
1.6
1.8
2.0
Fig. 5 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V
, G
A
T
E
T
HRESH
O
LD V
O
LT
AG
E (
V
)
GS
(T
H
)
I = 1mA
D
|Y
|, FO
RW
ARD TR
ANSFE
R
ADMI
T
TANCE
(S
)
FS
0
0.01
0.1
1
0.001 0.01 0.1 1
I , DRAIN CURRENT (mA)
Fig. 6 Forward Transfer Admittance vs. Drain Current
D
V = 10V
DS
T = 25°C
A
T = -55°C
A
T = 150°C
A
T = 125°C
A
T = 85°C
A