Diodes DMN65D8LFB User Manual

Dmn65d8lfb, Dmn65d8lfb new prod uc t, Product summary

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DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

1 of 5

www.diodes.com

November 2011

© Diodes Incorporated

DMN65D8LFB

NEW PROD

UC

T

N-CHANNEL ENHANCEMENT MODE FIELD MOSFET

Product Summary

V

(BR)DSS

R

DS(ON)

I

D

T

A

= 25°C

60V

3.0

Ω @ V

GS

= 10V

400mA

4.0

Ω @ V

GS

= 5V

330mA


Description and Applications

These N-Channel enhancement mode field effect transistors are
produced using DIODES proprietary, high density, uses advanced
trench technology.These products have been designed to minimize
on-state resistance while provide rugged, reliable, and fast switching
performance.These products are particularly suited for low voltage,
low current applications such as small

Load switching
.

Features and Benefits

• N-Channel

MOSFET

Low On-Resistance

Low Gate Threshold Voltage

Low Input Capacitance

Fast Switching Speed

Small Surface Mount Package

ESD Protected Gate, 1.2kV HBM

Lead, Halogen and Antimony Free, RoHS Compliant

"Green" Device (Notes 1 and 2)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case:

X1-DFN1006-3

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208

Weight: 0.001 grams (approximate)
















Ordering Information

(Note 3)

Part Number

Case

Packaging

DMN65D8LFB-7

X1-DFN1006-3

3,000/Tape & Reel

DMN65D8LFB-7B

X1-DFN1006-3

10,000/Tape & Reel

Notes: 1.

No purposefully added lead. Halogen and Antimony Free.

2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com

3. For packaging details, go to our website at http://www.diodes.com


Marking Information








ate Code Key

Year

2011

2012

2013

2014

2015

2016

2017

Code Y

Z

A

B

C D

E

Month

Jan

Feb

Mar

Apr

May

Jun

Jul

Aug

Sep

Oct

Nov

Dec

Code 1 2 3 4 5 6 7 8 9 O N D

X1-DFN1006-3

Bottom View

Equivalent Circuit

Top View

Pin Configuration

ESD PROTECTED TO 1.2kV

Source

Body
Diode

Gate
Protection
Diode

Gate

Drain

X1

X1 = Product Type Marking Code

Top View

Dot Denotes Drain Side

D

S

G

DMN65D8LFB-7B

DMN65D8LFB-7

Top View

Bar Denotes Gate and Source Side

X1

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