Dmn65d8lfb, Dmn65d8lfb new prod uc t, Maximum ratings – Diodes DMN65D8LFB User Manual

Page 2: Thermal characteristics, Electrical characteristics

Advertising
background image

DMN65D8LFB

Document number: DS35449 Rev. 2 - 2

2 of 5

www.diodes.com

November 2011

© Diodes Incorporated

DMN65D8LFB

NEW PROD

UC

T





Maximum Ratings

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

60 V

Gate-Source Voltage

V

GSS

±20

V

Continuous Drain Current (Note 4) V

GS

= 10V

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

260
210

mA

Continuous Drain Current (Note 5) V

GS

= 10V

Steady

State

T

A

= 25°C

T

A

= 70°C

I

D

400
310

mA



Thermal Characteristics

Characteristic Symbol

Value

Units

Power Dissipation, @T

A

= 25°C (Note 4)

P

D

430 mW

Thermal Resistance, Junction to Ambient @T

A

= 25°C (Note 4)

R

θJA

290

°C/W

Power Dissipation, @T

A

= 25°C (Note 5)

P

D

840 mW

Thermal Resistance, Junction to Ambient @T

A

= 25°C (Note 5)

R

θJSA

147

°C/W

Operating and Storage Temperature Range

T

J

, T

STG

-55 to +150

°C


Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage

BV

DSS

60 - -

V

V

GS

= 0V, I

D

= 250

μA

Zero Gate Voltage Drain Current T

J

= 25°C

I

DSS

- - 0.1 µA

V

DS

= 60V, V

GS

= 0V

Gate-Body Leakage

I

GSS

- -

±10

µA

V

GS

=

±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage

V

GS(th)

1.2 - 2.0 V

V

DS

= V

GS

, I

D

= 250

μA

Static Drain-Source On-Resistance

R

DS (ON)

-

-

3.0
4.0

Ω

V

GS

= 10V, I

D

= 0.115A

V

GS

= 5V, I

D

= 0.1115A

Forward Transfer Admittance

|Y

fs

|

80 320 -

mS

V

DS

= 10V, I

D

= 0.115A

Diode Forward Voltage

V

SD

- 0.7 1.2 V

V

GS

= 0V, I

S

= 0.115A

DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance

C

iss

- 25 - pF

V

DS

= 25V, V

GS

= 0V, f = 1.0MHz

Output Capacitance

C

oss

- 4.7 -

pF

Reverse Transfer Capacitance

C

rss

- 2.5 -

pF

Turn-On Delay Time

t

D(on)

- 3.27 -

ns

V

DD

= 30V, V

GEN

= 10V,

R

GEN

= 25

Ω,I

D

= 0.115A

Turn-On Rise Time

t

r

- 3.15 -

ns

Turn-Off Delay Time

t

D(off)

- 12.025 -

ns

Turn-Off Fall Time

t

f

- 6.29 -

ns

Notes:

4. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.

5. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided.

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to production testing.














Advertising