Diodes HTMN5130SSD User Manual

Product summary, Description, Applications

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HTMN5130SSD

Document number: DS36319 Rev. 3 - 2

1 of 6

www.diodes.com

November 2013

© Diodes Incorporated

HTMN5130SSD

ADVAN

CE I

N

F

O

RM

ATI

O

N

55V DUAL N-CHANNEL 175°C MOSFET

Product Summary

V

(BR)DSS

R

DS(on) max

I

D

T

A

= +25°C

55V

130mΩ @ V

GS

= 10V

2.86 A

200mΩ @ V

GS

= 4.5V

2.3 A

Description

This new generation MOSFET has been designed to minimize the on-
state resistance (R

DS(ON)

) and yet maintain superior switching

performance, making it ideal for high efficiency power management
applications.

Applications

 DC-DC

Converters

Power Management Functions

 Backlighting

Features and Benefits

Low Input Capacitance

 Low

On-Resistance

Fast Switching Speed

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability


Mechanical Data

 Case:

SO-8

Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections: See Diagram

Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208

Weight: 0.074 grams (approximate)


















Ordering Information

(Note 4)

Part Number

Case

Packaging

HTMN5130SSD-13

SO-8

2,500/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.



Marking Information














Top View

Top View

Pin Configuration

Equivalent Circuit

D2

S2

G2

D1

S1

G1

D1

S1

G1

S2

G2

D1

D2

D2

e3

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