Diodes HTMN5130SSD User Manual
Page 4
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HTMN5130SSD
Document number: DS36319 Rev. 3 - 2
4 of 6
November 2013
© Diodes Incorporated
HTMN5130SSD
ADVAN
CE I
N
F
O
RM
ATI
O
N
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
(t
h
)
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
-50 -25
0
25
50
75 100 125 150 175
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T (
A
)
S
0
2
4
6
8
10
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
C
, J
U
N
C
TI
O
N
C
A
P
A
C
IT
A
N
C
E (
p
F)
T
10
100
1000
0
5
10
15
20
25
30
35
40
C
iss
C
oss
C
rss
f = 1MHz
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0
2
4
6
8
10
V
= 40V
I = A
DS
D
2
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