Diodes DMN10H120SFG - Manual (Page 2)

POWERDI is a registered trademark of Diodes Incorporated
DMN10H120SFG
Document number: DS36250 Rev. 1 - 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMN10H120SFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
100 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.4
2.6
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
4.8
3.7
A
Continuous Drain Current (Note 6) V
GS
= 6V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
3.2
2.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
4.6
3.6
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
20 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.0
W
T
A
= +70°C 0.6
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
131
°C/W
t<10s 76
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.3
W
T
A
= +70°C 1.2
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
55
°C/W t<10s 28
Thermal Resistance, Junction to Case (Note 6) R
θJC
6.9
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
100 - - V V
GS
= 0V, I
D
= 250 μA
Zero Gate Voltage Drain Current I
DSS
- - 1.0 μA V
DS
= 80V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
1.5 2.0 3.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS (ON)
- 68 110
mΩ
V
GS
= 10V, I
D
= 3.3A
- 75 122 V
GS
= 6.0V, I
D
= 3.0A
Forward Transfer Admittance |Y
fs
| - 13 - S V
DS
= 10V, I
D
= 3.3A
Diode Forward Voltage V
SD
- 0.78 - V V
GS
= 0V, I
S
= 3.2A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 549 - pF
V
DS
= 50V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
- 41.1 - pF
Reverse Transfer Capacitance C
rss
- 19.0 - pF
Gate Resistance R
g
- 1.6 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge V
GS
= 10V Q
g
- 10.6 - nC
V
DS
= 50V, I
D
= 3.3A
Total Gate Charge V
GS
= 4.5V Q
g
- 5.2 - nC
Gate-Source Charge Q
gs
- 2.3 - nC
Gate-Drain Charge Q
gd
- 2.6 - nC
Turn-On Delay Time t
D(on)
- 3.8 - ns
V
GS
= 10V, V
DS
= 50V,
R
G
= 6.0Ω, I
D
= 3.3A
Turn-On Rise Time t
r
- 1.8 - ns
Turn-Off Delay Time t
D(off)
- 11.5 - ns
Turn-Off Fall Time t
f
- 2.5 - ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.