Diodes DMN10H120SFG - Manual (Page 4)

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DMN10H120SFG
Document number: DS36250 Rev. 1 - 2
4 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMN10H120SFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
0
0.03
0.06
0.09
0.12
0.15
0.18
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J

R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TA
N
C
E (
)
DS
(O
N
)

V = V
I = 1A
GS
D
5
V = V
I = 5A
GS
D
10
1
1.5
2
2.5
3
3.5
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J

I = 1mA
D
I = 250µA
D
V
, G
A
T
E
THRES
H
O
LD
VO
LT
AG
E (
V
)
GS
(t
h
)
0
1
2
3
4
5
6
7
8
9
10
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
0 5 10 15 20 25 30 35 40 45 50
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
10
0 2 4 6 8 10 12
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
LT
A
G
E (
V
)
GS
V = 50V
I = A
DS
D
3.3
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W T = 150°C
T = 25°C
J(max)
A
Single Pulse
DUT on 1 * MRP Board
P = 20ms
W
P = 60ms
W