Diodes DMN10H170SFG - Manual (Page 2)

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DMN10H170SFG
Document number: DS36147 Rev. 4 - 2
2 of 6
www.diodes.com
August 2013
© Diodes Incorporated
DMN10H170SFG
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
100 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V
GS
= 10V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
I
D
2.9
2.4
8.5
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
3.7
3.0
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
3.0 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
16 A
Avalanche Current (Note 7) I AR 5.3 A
Avalanche Energy (Note 7) E AR 20 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.94
W
T
A
= +70°C 0.6
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θJA
137 °C/W
t<10s 82 °C/W
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.0
W
T
A
= +70°C 1.3
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θJA
60 °C/W
t<10s 36 °C/W
Thermal Resistance, Junction to Case (Note 6) R
θJC
7.0 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
100 — — V V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current I
DSS
— — 1.0 μA V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0 — 3.0 V V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance R
DS(ON)
— 99 122
mΩ
V
GS
= 10V, I
D
= 3.3A
— 104 133 V
GS
= 4.5V, I
D
= 3.0A
Forward Transfer Admittance |Y
fs
| — 4.4 — S V
DS
= 10V, I
D
= 3.3A
Diode Forward Voltage V
SD
— 0.7 1.0 V V
GS
= 0V, I
S
= 3.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
— 870.7 — pF
V
DS
= 25V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 40.8 — pF
Reverse Transfer Capacitance C
rss
— 24.6 — pF
Gate resistance R
g
— 1.1 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 7.0 — nC
V
DS
= 50V, I
D
= 3.3A
Total Gate Charge (V
GS
= 10V) Q
g
— 14.9 — nC
Gate-Source Charge Q
gs
— 3.3 — nC
Gate-Drain Charge Q
gd
— 3.0 — nC
Turn-On Delay Time t
D(on)
— 4.4 — ns
V
DD
= 50V, V
GEN
= 10V,
R
GEN
= 6.0Ω, I
D
= 3.3A
Turn-On Rise Time t
r
— 2.3 — ns
Turn-Off Delay Time t
D(off)
— 13.9 — ns
Turn-Off Fall Time t
f
— 3.4 — ns
Reverse Recovery Time t
rr
— 22.4 — ns
I
S
= 3.3A, dI/dt = 100A/μs
Reverse Recovery Charge Q
rr
— 19.7 — nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. UIS in production with L = 1.43mH, T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.