Diodes DMN10H170SFG User Manual
Page 4
POWERDI is a registered trademark of Diodes Incorporated
DMN10H170SFG
Document number: DS36147 Rev. 4 - 2
4 of 6
August 2013
© Diodes Incorporated
DMN10H170SFG
NEW PROD
UC
T
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
J
V,
G
AT
E
T
H
R
ES
H
O
LD
V
O
LTA
G
E (V
)
GS
(t
h)
1
1.5
2
2.5
3
3.5
4
I = 250µA
D
I = 1mA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 8 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(V
)
S
0
1
2
3
4
5
6
7
8
9
10
0
0.3
0.6
0.9
1.2
1.5
T = 25°C
A
C
, J
UNCT
IO
N CAP
A
CI
TA
N
C
E (
p
F
)
T
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 9 Typical Junction Capacitance
f = 1MHz
0
5
10
15
20
C
iss
C
oss
C
rss
25
30
35
40
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 10 Gate Charge
0
2
4
6
8
10
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
12
14
16
V
= 50V
I =
A
DS
D
3.3
0.00001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
0.001
0.01
0.1
r(
t),
T
R
A
N
SI
EN
T
T
H
E
R
MA
L
R
ES
IS
TAN
C
E
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R
(t) = r(t) * R
R
= 126°C/W
Duty Cycle, D = t1/ t2
JA
JA
JA
0.0001