Diodes DMN10H220LE - Manual (Page 2)

DMN10H220LE
Document number: DS36475 Rev. 2 - 2
2 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMN10H220LE
NEW PROD
UC
T
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
100 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 5) V
GS
= 10V
T
A
= +25°C
T
A
= +70°C
I
D
2.3
1.8
A
T
C
= +25°C
T
C
= +70°C
I
D
6.2
4.9
A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
1.5 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
8 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T A = +25°C
P
D
1.8
W
T A = +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 5) R
θJA
69 °C/W
Total Power Dissipation (Note 5) T C = +25°C P
D
14 W
Thermal Resistance, Junction to Case (Note 5) R
θJC
8.7 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
100 — — V V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current I
DSS
— — 1 µA V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= ±16V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
1 — 2.5 V V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance R
DS(ON)
— — 220
mΩ
V
GS
= 10V, I
D
= 1.6A
— — 250 V
GS
= 4.5V, I
D
= 1.3A
Diode Forward Voltage V
SD
— — 1.5 V V
GS
= 0V, I
S
= 1.1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
— 401 —
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 22 —
Reverse Transfer Capacitance C
rss
— 17 —
Gate Resistnace R
g
— 2.1 — Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V) Q
g
— 4.1 —
nC V
DS
= 50V, I
D
= 1.6A
Total Gate Charge (V
GS
= 10V) Q
g
— 8.3 —
Gate-Source Charge Q
gs
— 1.5 —
Gate-Drain Charge Q
gd
— 2 —
Turn-On Delay Time t
D(on)
— 6.8 —
ns
V
DS
= 50V, V
GS
= 4.5V,
R
G
= 6.8 Ω, I
D
= 1.0A
Turn-On Rise Time t
r
— 8.2 —
Turn-Off Delay Time t
D(off)
— 7.9 —
Turn-Off Fall Time t
f
— 3.6 —
Reverse Recovery Time t
rr
— 17 — ns
I
S
= 1.1A, di/dt =100A/ μs
Reverse Recovery Charge Q
rr
— 9.8 — nC
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.