Diodes DMN10H220LE User Manual
Page 4
DMN10H220LE
Document number: DS36475 Rev. 2 - 2
4 of 6
May 2014
© Diodes Incorporated
DMN10H220LE
NEW PROD
UC
T
NEW PROD
UC
T
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
DS
(O
N)
Ω
0
0.1
0.2
0.3
0.4
0.5
-50
-25
0
25
50
75
100 125
150
V
= 4.5V
I = 1A
GS
D
V
=
V
I = 2A
GS
D
10
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
J
°
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(t
h
)
1
1.3
1.6
1.9
2.2
2.5
-50
-25
0
25
50
75
100
125 150
I = 1mA
D
I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 125°C
A
0
1
2
3
4
5
6
7
8
9
10
0
0.3
0.6
0.9
1.2
1.5
T = 150°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
10
100
1000
0
5
10
15
20
25
30
35
40
f = 1MHz
C
iss
C
oss
C
rss
Q
(nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0
2
4
6
8
10
V
= 50V
I =
A
DS
D
1.6
V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
0.001
0.01
0.1
1
10
0.1
1
10
100
1000
T
= 150°C
T = 25°C
J(max)
A
V
= 10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W