Diodes DMN10H220LE User Manual

Page 4

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DMN10H220LE

Document number: DS36475 Rev. 2 - 2

4 of 6

www.diodes.com

May 2014

© Diodes Incorporated

DMN10H220LE

NEW PROD

UC

T

NEW PROD

UC

T



T , JUNCTION TEMPERATURE ( C)

Figure 7 On-Resistance Variation with Temperature

J

°

R

, D

R

AI

N

-S

O

U

R

C

E

O

N-

R

ES

IS

TAN

C

E (

)

DS

(O

N)

Ω

0

0.1

0.2

0.3

0.4

0.5

-50

-25

0

25

50

75

100 125

150

V

= 4.5V

I = 1A

GS

D

V

=

V

I = 2A

GS

D

10

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

V,

G

A

T

E

T

H

R

ES

H

O

LD

V

O

LT

A

G

E (

V

)

GS

(t

h

)

1

1.3

1.6

1.9

2.2

2.5

-50

-25

0

25

50

75

100

125 150

I = 1mA

D

I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9 Diode Forward Voltage vs. Current

I,

S

O

U

R

C

E

C

U

R

R

EN

T

(A

)

S

T = 125°C

A

0

1

2

3

4

5

6

7

8

9

10

0

0.3

0.6

0.9

1.2

1.5

T = 150°C

A

T = 85°C

A

T = -55°C

A

T = 25°C

A

V , DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10 Typical Junction Capacitance

C

, J

U

N

C

T

IO

N

C

A

P

A

C

IT

A

N

C

E (

p

F

)

T

10

100

1000

0

5

10

15

20

25

30

35

40

f = 1MHz

C

iss

C

oss

C

rss

Q

(nC)

g

, TOTAL GATE CHARGE

Figure 11 Gate Charge

V

G

A

T

E

T

H

R

ES

H

O

LD

V

O

LT

A

G

E (

V

)

GS

0

2

4

6

8

10

0

2

4

6

8

10

V

= 50V

I =

A

DS

D

1.6

V , DRAIN-SOURCE VOLTAGE (V)

Figure 12 SOA, Safe Operation Area

DS

I,

D

R

AI

N

C

U

R

R

EN

T

(A

)

D

R
Limited

DS(on)

0.001

0.01

0.1

1

10

0.1

1

10

100

1000

T

= 150°C

T = 25°C

J(max)

A

V

= 10V

Single Pulse

GS

DUT on 1 * MRP Board

DC

P = 10s

W

P = 1s

W

P = 100ms

W

P = 10ms

W

P = 1ms

W

P = 100µs

W


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