Diodes DMP1018UCB9 - Manual (Page 4)

DMP1018UCB9
Document number: DS36149 Rev. 2 - 2
4 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMP1018UCB9
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.2
0.4
0.6
0.8
1.2
1.4
1.0
0
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
-I = 1mA
D
-I = 250µA
D
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
10
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
T = 25 C
A

10,000
0 2 4 6 8 10 12
1,000
100
10
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
C
oss
C
rss
f = 1MHz
C
iss
1 2 3 4 5 6
-I
, L
EAKA
G
E
CURREN
T
(
nA)
GS
S
100
10
1
0.1
0.01
-V , GATE-SOURCE VOLTAGE (V)
Figure 10 Typical Gate-Source Leakage Current vs. Voltage
GS
T = 150°C
A
T = 125°C
A
T = 85°C
A T = 25°C
A
T = -55°C
A
0
1
2
3
4
5
6
0 1 2 3 4 5 6 7 8
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V
,
G
AT
E
-S
O
U
R
C
E V
O
LTA
G
E (
V
)
GS
V = -6V
I = -2A
DS
D
0.01
0.1
1
10
100
0.1 1 10 100
T = 150°C
T = 25°C
Single Pulse
DUT on 1*MRP board
V
= -6V
J(max)
GS
A
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W