Diodes DMP1045UFY4 - Manual (Page 2)

DMP1045UFY4
Document number: DS31853 Rev. 7 - 2
2 of 6
www.diodes.com
September 2012
© Diodes Incorporated
DMP1045UFY4
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
-12 V
Gate-Source Voltage V
GSS
±8 V
Continuous Drain Current V
GS
= -4.5V (Note 6)
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-5.5
-4.3
A
t<5s
T A = +25°C
T A = +70°C
-6.5
-5.1
A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
-2.2 A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
-25 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
T
A
= +25°C
P
D
0.7
W
T
A
= +70°C 0.4
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
193
°C/W
t<5s 135
Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
73
°C/W t<5s 52
Thermal Resistance, Junction to Case (Notes 6) Steady state R θJC 17
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-12 - - V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - -1.0 μA
V
DS
= -12V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - ±10 μA
V
GS
=
±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.3 -0.55 -1.0 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R
DS (ON)
-
26 32
m Ω
V
GS
= -4.5V, I
D
= -4.0A
31 45 V
GS
= -2.5V, I
D
= -3.5A
51 75 V
GS
= -1.8V, I
D
= -2.7A
Forward Transfer Admittance |Y
fs
| - 12 - S V
DS
= -5V, I
D
= -4A
Diode Forward Voltage V
SD
- -0.6 - V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 1291 - pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C oss
- 266 - pF
Reverse Transfer Capacitance C
rss
- 242 - pF
Gate Resistnace R
g
- 13 - Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge (V
GS
= -8V) Q
g
- 23.7 - nC
V
DS
= -10V, I
D
= -4A
Total Gate Charge (V
GS
= -4.5V) Q
g
- 14.7 nC
Gate-Source Charge Q
gs
- 1.8 - nC
Gate-Drain Charge Q
gd
- 4.6 - nC
Turn-On Delay Time t
D(on)
- 14 - ns
V
DS
= -10V, V
GS
= -4.5V,
R
L
= 2.5 Ω, R
G
= 3.0 Ω
Turn-On Rise Time t
r
- 22 - ns
Turn-Off Delay Time t D(off)
- 74 - ns
Turn-Off Fall Time t
f
- 75 - ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.