Diodes DMP1045UFY4 User Manual
Page 4
DMP1045UFY4
Document number: DS31853 Rev. 7 - 2
4 of 6
September 2012
© Diodes Incorporated
DMP1045UFY4
NEW PROD
UC
T
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.02
0.04
0.06
0.08
0.10
0
-50
-25
0
25
50
75
100
125
150
T , JUNCTION TEMPERATURE ( C)
J
°
Fig. 7 On-Resistance Variation with Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
D
S
(on)
Ω
V
= -4.5V
I =
A
GS
D
-10
V
=
5V
I =
A
GS
D
-2.
-5
0.2
0.4
0.6
0.8
1.0
0
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
-I = 250µA
D
12
16
20
0.4
0.6
0.8
1.0
1.4
-V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
SD
1.2
0
4
8
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 25 C
A
°
10,000
0
2
4
6
8
10
12
1,000
100
10
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0
2
4
6
8
0
5
10
15
20
25
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS
V
= -10V
I = -4A
DS
D
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T
= 150°C
T = 25°C
J(max)
A
V
= -8V
Single Pulse
GS
DUT on 1 * MRP Board
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P
= 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ