Diodes DMP2008UFG - Manual (Page 2)

POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 13 - 2
2 of 6
www.diodes.com
June 2013
© Diodes Incorporated
DMP2008UFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage (Note 5) V
GSS
±8 V
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
I
D
-12
-9.5
-54
A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
-80 A
Maximum Continuous Body Diode Forward Current (Note 6) I
S
-2.2 A
Avalanche Current (Note 8) I
AS
-15 A
Avalanche Energy (Note 8) E
AS
-113 mJ
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.2
W
T
C
= +25°C 41
Thermal Resistance, Junction to Ambient
(Note 5)
R ΘJA
59
°C/W (Note 6) 137
Thermal Resistance, Junction to Case (Note 6) R ΘJC 3.0
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BV
DSS
-20 — — V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
— — -1 µA V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage I
GSS
— — ±100 nA V
GS
= 8V, V
DS
= 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
V
GS(th)
-0.4 — -1.0 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
— — 8
m 
V
GS
= -4.5V, I
D
= -12A
— — 9.8 V
GS
= -2.5V, I
D
= -10A
— — 13 V
GS
= -1.8V, I
D
= -9.3A
— — 17 V
GS
= -1.5V, I
D
= -8.3A
Forward Transfer Admittance |Y
fs
| — 42 — S V
DS
= -5V, I
D
= -12A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
— 6909 —
pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
— 635 —
Reverse Transfer Capacitance C
rss
— 563 —
Gate Resistance R
G
— 2.5 —  V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
— 72 —
nC  V
DD
= -10V, I
D
= -12A
Total Gate Charge (V
GS
= -2.5V) Q
g
— 40 —
Gate-Source Charge Q
gs
— 8.6 —
Gate-Drain Charge Q
gd
— 14.5 —
Turn-On Delay Time t
D(on)
— 22 —
ns
V
GS
= -4.5V, V
DD
= -10V,
R
G
= 6 , I
D
= -12A
Turn-On Rise Time t
r
— 33 —
Turn-Off Delay Time t
D(off)
— 291 —
Turn-Off Fall Time t
f
— 124 —
BODY DIODE CHARACTERISTICS
Diode Forward Voltage V
SD
— -0.7 — V V
GS
= 0V, I
S
= -12A
— -0.7 — V V
GS
= 0V, I
S
= -2A
Reverse Recovery Time (Note 10) t
rr
— 25 — ns I
F
= -12A, di/dt = 100A/µs
Reverse Recovery Charge (Note 10) Q
rr
— 15 — nC I
F
= -12A, di/dt = 100A/µs
Notes: 5. AEC-Q101 V
GS
maximum is 6.4V.
6. R
ΘJA
is determined with the device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. R
ΘJC
is guaranteed by design
while R
ΘJA
is determined by the user’s board design.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
8 .UIS in production with L = 1mH, T
J
= +25°C
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.