Diodes DMP2008UFG User Manual
Page 4
POWERDI is a registered trademark of Diodes Incorporated
DMP2008UFG
Document number: DS35694 Rev. 13 - 2
4 of 6
June 2013
© Diodes Incorporated
DMP2008UFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
ADVAN
CE I
N
F
O
RM
ATI
O
N
0.005
0.015
0.010
0.020
0
-50 -25
0
25
50
75
100 125
150
T , JUNCTION TEMPERATURE ( C)
J
Fig. 7 On-Resistance Variation with Temperature
R
, D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ES
IS
TAN
C
E (
)
D
S
(on)
V
= -4.5V
I =
A
GS
D
-12
V
=
5V
I =
A
GS
D
-2.
-10
0.2
0.4
0.6
0.8
1.2
1.0
0
-50 -25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E(
V
)
GS
(T
H
)
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1.0
1.2
-V , SOURCE-DRAIN VOLTAGE (V)
Fig. 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
100,000
0
5
10
15
20
10,000
1,000
100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0.5
1.5
2.5
3.5
4.5
0
10
20
30
40
50
60
70
80
0
1.0
2.0
3.0
4.0
-V
, G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
0.01
0.1
1
10
100
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
R
Limited
DS(on)
T
= 150°C
T = 25°C
J(max)
A
V
= -8V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W