Dmp2033uvt advanced information, Maximum ratings, Thermal characteristics – Diodes DMP2033UVT User Manual

Page 2: Electrical characteristics, Dmp2033uvt

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DMP2033UVT

Document number: DS36617 Rev. 2 - 2

2 of 5

www.diodes.com

March 2014

© Diodes Incorporated

DMP2033UVT

ADVANCED INFORMATION


Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

±8 V

Continuous Drain Current (Note 6)

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-4.2
-3.4

A

Pulsed Drain Current (Note 6)

I

DM

-10 A




Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.2 W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

R

θJA

100 °C/W

Total Power Dissipation (Note 6)

P

D

1.7 W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

R

θJA

74 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to 150

°C




Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-20

V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current T

J

= +25°C

I

DSS

-1.0 µA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

±100 nA

V

GS

= ±8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.5 — -0.9 V

V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS(ON)

45 65

mΩ

V

GS

= -4.5V, I

D

= -4.2A

57 100

V

GS

= -2.5V, I

D

= -3.4A

80 200

V

GS

= -1.8V, I

D

= -2A

Forward Transfer Admittance

|Y

fs

|

9

S

V

DS

= -5V, I

D

= -4A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

845

pF

V

DS

= -15V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

72

pF

Reverse Transfer Capacitance

C

rss

63

pF

SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge

Q

g

10.4

nC

V

GS

= -4.5V, V

DS

= -4V,

I

D

= -3.5A

Gate-Source Charge

Q

gs

1.5

nC

Gate-Drain Charge

Q

gd

1.9

nC

Turn-On Delay Time

t

D(on)

6.5

ns

V

DS

= -4V, V

GS

= -4.5V,

R

G

= 6

Ω, I

D

= -1A

Turn-On Rise Time

t

r

13.4

ns

Turn-Off Delay Time

t

D(off)

51.5

ns

Turn-Off Fall Time

t

f

21.8

ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.





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