Diodes DMP2033UVT - Manual (Page 4)

DMP2033UVT
Document number: DS36617 Rev. 2 - 2
4 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
ADVANCED INFORMATION
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
0
0.2
0.4
0.6
0.8
1
1.2
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 125°C
A
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
T = 150°C
A
T = 85°C
A
T = -55°C
A
T = 25°C
A
10
1000
10000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
pF
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
0 2 4 6 8 10 12 14 16 18 20
100
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0
1
2
3
4
5
6
7
8
0 2 4 6 8 10 12 14 16 18 20
V = -4V
I = -3.5A
DS
D
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
Dim Min Max Typ
A − 1.00 −
A1 0.01 0.10 −
A2 0.84 0.90 −
D − − 2.90
E − − 2.80
E1 − − 1.60
b 0.30 0.45 −
c 0.12 0.20 −
e − − 0.95
e1 − − 1.90
L 0.30 0.50
L2 − − 0.25
θ 0° 8° 4°
θ1 4° 12° −
All Dimensions in mm
c
A1
L
E1 E
A2
D
e1
e
6x b
θ
4x 1 θ
L2
A