Maximum ratings, Thermal characteristics, Electrical characteristics – Diodes DMP2033UCB9 User Manual

Page 2

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DMP2033UCB9

Document number: DS35904 Rev. 3 - 2

2 of 6

www.diodes.com

June 2012

© Diodes Incorporated

DMP2033UCB9

NEW PROD

UC

T





Maximum Ratings

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-20 V

Gate-Source Voltage

V

GSS

-6 V

Continuous Drain Current (Note 5) V

GS

= -4.5V

Steady

State

T

A

= 25

°C

T

A

= 70

°C

I

D

-4.2A
-3.3A

A

Continuous Drain Current (Note 6) V

GS

= -4.5V

Steady

State

T

A

= 25

°C

T

A

= 70

°C

I

D

-5.8A
-4.5A

A

Pulsed Drain Current

I

DM

-30 A


Thermal Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic Symbol

Value

Units

Total Power Dissipation (Note 5)

P

D

1.0 W

Total Power Dissipation (Note 6)

P

D

1.8 W

Thermal Resistance, Junction to Ambient (Note 5)

R

θJA

126.8 °C/W

Thermal Resistance, Junction to Ambient (Note 6)

R

θJA

69 °C/W

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C



Electrical Characteristics

@T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-20 - - V

V

GS

= 0V, I

D

= -250

μA

Gate-Source Breakdown Voltage

BV

GSS

-6.1 - - V

I

GS

= -250

μA, V

DS

= 0V

Zero Gate Voltage Drain Current @T

c

= 25°C

I

DSS

- - -1

μA

V

DS

= -16V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

-100

nA

V

GS

= -6V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.4 -0.6 -1.1 V V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

-

28 33

V

GS

= -4.5V, I

D

= -2A

35 45

V

GS

= -2.5V, I

D

= -2A

45 65

V

GS

= -1.8V, I

D

= -2A

Forward Transfer Admittance

|Y

fs

|

- 10.8 -

S

V

DS

= -10V, I

D

= -2A

Diode Forward Voltage (Note 6)

V

SD

- -0.7 -1 V

V

GS

= 0V, I

S

= -2A

Reverse Recovery Charge

Q

rr

-

15

- nC

V

dd

= -9.5V, I

F

= -2A,

di/dt = 200A/

μs

Reverse Recovery Time

t

rr

-

25

- ns

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

- 382

500 pF

V

DS

= -10V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 204

270 pF

Reverse Transfer Capacitance

C

rss

- 86

115 pF

Series Gate Resistance

R

G

26.1

35 Ω

V

DS

= 0V, V

GS

= 0V, f = 1.0MHz

Total Gate Charge (4.5V)

Q

g

- 5.4

7.0 nC

V

GS

= -4.5V, V

DS

= -10V,

I

D

= -2A

Gate-Source Charge

Q

gs

- 0.7 - nC

Gate-Drain Charge

Q

gd

- 1.5 - nC

Turn-On Delay Time

t

D(on)

- 8.5 - ns

V

DD

= -10V, V

GS

= -4.5V,

I

DS

= -2A, R

G

= 2

Ω,

Turn-On Rise Time

t

r

- 11.8 - ns

Turn-Off Delay Time

t

D(off)

- 47 - ns

Turn-Off Fall Time

t

f

- 56 - ns

Notes: 5.

Device mounted on FR-4 PCB with minimum recommended pad layout.

6. Device mounted on FR4 material with 1-inch

2

(6.45-cm

2

), 2-oz. (0.071-mm thick) Cu

7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.


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