Diodes DMP2033UCB9 - Manual (Page 2)

DMP2033UCB9
Document number: DS35904 Rev. 3 - 2
2 of 6
www.diodes.com
June 2012
© Diodes Incorporated
DMP2033UCB9
NEW PROD
UC
T
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V DSS
-20 V
Gate-Source Voltage V
GSS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25 °C
T
A
= 70 °C
I
D
-4.2A
-3.3A
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
A
= 25
°C
T
A
= 70
°C
I
D
-5.8A
-4.5A
A
Pulsed Drain Current I
DM
-30 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
1.0 W
Total Power Dissipation (Note 6) P D
1.8 W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 126.8 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R θJA 69 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-20 - - V V GS = 0V, I D = -250 μA
Gate-Source Breakdown Voltage BV
GSS
-6.1 - - V I
GS
= -250 μA, V
DS
= 0V
Zero Gate Voltage Drain Current @T
c
= 25°C I
DSS
- - -1 μA V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - -100 nA V
GS
= -6V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 -0.6 -1.1 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
-
28 33
mΩ
V GS = -4.5V, I D = -2A
35 45 V
GS
= -2.5V, I
D
= -2A
45 65 V
GS
= -1.8V, I
D
= -2A
Forward Transfer Admittance |Y fs | - 10.8 - S V DS = -10V, I D = -2A
Diode Forward Voltage (Note 6) V
SD
- -0.7 -1 V V
GS
= 0V, I
S
= -2A
Reverse Recovery Charge Q
rr
- 15 - nC V dd = -9.5V, I F = -2A,
di/dt = 200A/ μs Reverse Recovery Time t
rr
- 25 - ns
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
- 382 500 pF
V
DS
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C oss
- 204 270 pF
Reverse Transfer Capacitance C
rss
- 86 115 pF
Series Gate Resistance R
G
26.1 35 Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (4.5V) Q g
- 5.4 7.0 nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -2A
Gate-Source Charge Q
gs
- 0.7 - nC
Gate-Drain Charge Q
gd
- 1.5 - nC
Turn-On Delay Time t
D(on)
- 8.5 - ns
V
DD
= -10V, V
GS
= -4.5V,
I
DS
= -2A, R
G
= 2 Ω,
Turn-On Rise Time t
r
- 11.8 - ns
Turn-Off Delay Time t
D(off)
- 47 - ns
Turn-Off Fall Time t
f
- 56 - ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.