Diodes DMP2066UFDE - Manual (Page 2)

DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
2 of 6
www.diodes.com
July 2012
© Diodes Incorporated
DMP2066UFDE
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-20 V
Gate-Source Voltage V GSS
±12 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-6.2
-4.9
A
t<5s
T
A
= +25°C
T A = +70°C
I D
-7.5
-5.9
A
Continuous Drain Current (Note 5) V GS = -1.8V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.2
-3.4
A
t<5s
T
A
= +25°C
T
A
= +70°C
I
D
-5.2
-4.1
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-25 A
Maximum Continuous Body Diode Forward Current (Note 5) I
S
2.5 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) P
D
0.66 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R θJA
189 °C/W
t<5s 123 °C/W
Total Power Dissipation (Note 5) P
D
2.03 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R θJA
61 °C/W
t<5s 40 °C/W
Thermal Resistance, Junction to Case (Note 5) R θJc 9.3 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-20 ⎯ ⎯ V V GS = 0V, I D = -250µA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100
nA V
GS
= ±12.0V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.4 ⎯ -1.1 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R DS (ON)
⎯ 25 36
m Ω
V
GS
= -4.5V, I
D
= -4.6A
⎯ 33 56 V GS = -2.5V, I D = -3.8A
⎯ 50 75 V
GS
= -1.8V, I
D
= -2.0A
Forward Transfer Admittance |Y
fs
| ⎯ 9 ⎯ S V
DS
= -10V, I
D
= -4.5A
Diode Forward Voltage V
SD
⎯ -0.7 -1.2 V V
GS
= 0V, I
S
= -2.1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯ 1537 ⎯ pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C oss
⎯ 146 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 127 ⎯ pF
Gate Resistance R
g
⎯ 10.4 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge Q g
⎯ 14.4 ⎯
nC
V DS = -10V, V GS = -4.5V
I
D
= -4.5A
Gate-Source Charge Q
gs
⎯ 2.6 ⎯
Gate-Drain Charge Q
gd
⎯ 2.7 ⎯
Turn-On Delay Time t
D(on)
⎯ 13.7 ⎯
ns
V
DD
= -10V, V
GS
= -4.5V, R
G
= 6 Ω,
R
L
= 10 Ω, I
D
= -1A
Turn-On Rise Time t r
⎯ 14.0 ⎯
Turn-Off Delay Time t
D(off)
⎯ 79.1 ⎯
Turn-Off Fall Time t
f
⎯ 35.5 ⎯
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
6. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.