Dmp2066ufde – Diodes DMP2066UFDE User Manual
Page 4
DMP2066UFDE
Document number: DS35496 Rev. 5 - 2
4 of 6
July 2012
© Diodes Incorporated
DMP2066UFDE
-50
-25
0
25
50
75
100
125
150
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(t
h
)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
I = -250µA
D
I = 1mA
D
0
0.2
0.4
0.6
0.8
1
1.2
I
, SOUR
CE
CURRE
NT
(
A
)
S
V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
4
8
12
16
20
0.2
0.4
0.6
0.8
1
1.2
T = 25 C
A
°
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
DS
I,
L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
1
10
100
1000
10000
100000
T =
A
25 C
°
T =
A
85 C
°
T = 150 C
A
°
0
5
10
15
20
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
f = 1MHz
C
RSS
C
ISS
C
OSS
100
1000
10000
-20
-16
-12
-8
-4
0
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate Charge Characteristics
G
V
,
GA
T
E
SOURCE VOL
T
AGE
(V
)
GS
0
1
2
3
4
5
0
2
4
6
8
10
12
14
16
18
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 SOA, Safe Operation Area
DS
0.01
0.1
1
10
100
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A)
D
R
Limited
DS(on)
T
= 150°C
T = 25°C
J(max)
A
V
= -12V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P
= 10ms
W
P = 1ms
W
P = 100µs
W