Diodes DMP2100UCB9 - Manual (Page 2)

DMP2100UCB9
Document number: DS35725 Rev. 3 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMP2100UCB9
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
D1D2
-20 V
Gate-Source Voltage V
GS
-6 V
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T C = +25°C
T
C
= +70°C
I
D1D2
-3.0
-2.1
A
Continuous Drain Current (Note 6) V
GS
= -4.5V
Steady
State
T
C
= +25°C
T
C
= +70°C
I
D1D2
-4.0
-3.0
A
Continuous Source Pin Current (Note 6) I S
-2.0 A
Continuous Gate Clamp Current (Note 6) I
G
-0.4 A
Pulsed Source Pin Current (Pulse duration 10 μs, duty cycle ≤ 1%) I
SM
-15 A
Pulsed Drain Current (Pulse duration 10 μs, duty cycle ≤ 1%) I
DM
-28 A
Pulsed Gate Clamp Current (Pulse duration 10 μs, duty cycle ≤ 1%) I
GM
-6 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) P
D
0.8 W
Total Power Dissipation (Note 6) P
D
1.6 W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 152 °C/W
Thermal Resistance, Junction to Ambient (Note 6) R θJA 65 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV
D1D2
-20 — — V V
GS
= 0V, I
D1D2
= -250 μA
Gate-Source Breakdown Voltage BV
GSS
-6.1 — — V I
GS
= -250 μA, V
D1D2
= 0V
Zero Gate Voltage Drain Current @T C = +25°C I DDS
— — -1 μA V D1D2 = -16V, V GS = 0V
Gate-Source Leakage I GSS
— — -100 nA V GS = -6V, V DS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V
GS(th)
-0.4 -0.7 -0.9 V V
D1D2
= V
GS
, I
DS
= -250 μA
Static Drain-Source On-Resistance R
D1D2(ON)
—
—
— 80 100
m Ω
V
GS
= -4.5V, I
D1D2
=- 1A
105 130 V
GS
= -2.5V, I
D1D2
= -1A
140 175 V
GS
= -1.8V, I
D1D2
= -1A
Forward Transfer Admittance |Y
fs
| — 5.3 — S V
D1D2
= -10V, I
D1D2
= -1A
DIODE CHARACTERISTICS
Diode Forward Voltage (Note 6) V
SD
— -0.7 -1 V V
GS
= 0V, I
D1D2
= -1A
Reverse Recovery Charge Q rr
— 18 — nC V
dd
= -9.5V, I
F
= -1A,
di/dt = 200A/ μs Reverse Recovery Time t rr
— 34 — ns
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C
iss
— 232 310 pF
V
D1D2
= -10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance C
oss
— 107 150 pF
Reverse Transfer Capacitance C
rss
— 43.5 55 pF
Total Gate Charge (4.5V) Q
g
— 3.3 4.2 nC
V
GS
= -4.5V, V
D1D2
= -10V,
I
D1D2
= -1A
Gate-Source Charge Q
gs
— 0.3 — nC
Gate-Drain Charge Q
gd
— 0.6 — nC
Gate Charge at V th Q g(th)
— 0.2 — nC
Turn-On Delay Time t
D(on)
— 8.5 — ns
V
D1D2
= -10V, V
GS
= -4.5V,
I D1D2 = -1A, R G = 30 Ω,
Turn-On Rise Time t
r
— 7.0 — ns
Turn-Off Delay Time t
D(off)
— 47 — ns
Turn-Off Fall Time t
f
— 28 — ns
Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout.
6. Device mounted on FR4 material with 1-inch 2 (6.45-cm 2 ), 2-oz. (0.071-mm thick) Cu
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.