Diodes DMP2100UCB9 - Manual (Page 4)

DMP2100UCB9
Document number: DS35725 Rev. 3 - 2
4 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMP2100UCB9
NEW PROD
UC
T
0 5 10 15 20
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 7 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
oss
C
rss
f = 1MHz
C
iss
0
1
2
3
4
5
6
0 1 2 3 4
Q , TOTAL GATE CHARGE (nC)
Fig. 8 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
0.1 1 10 100
-V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 SOA, Safe Operation Area
DS
T = 150°C
T = 25°C
Single Pulse DUT
on 1 * MRP Board
V
= -6V
J(max)
A
GS
0.01
0.1
1
10
100
-I
, D
R
AIN
C
U
R
R
EN
T
(A
)
D
R
Limited
DS(on)
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
P = 10 s
W
µ
0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Fig. 10 Transient Thermal Resistance
R (t) = r(t) * R   JA JA
R = 70°C/W
Duty Cycle, D = t1/ t2
JA
0.001
0.01
0.1
r(t),
T
R
ANSI
E
N
T
T
H
E
R
MA
L
R
ESI
S
T
AN
C
E
1
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse