Diodes DMP21D0UFB4 - Manual (Page 4)

DMP21D0UFB4
D atasheet number: DS35279 Rev. 3 - 2
4 of 7
www.diodes.com
February 2012
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DMP21D0UFB4
A Product Line of
Diodes Incorporated
R
, D
R
AI
N
-S
O
U
R
C
E
O
N-
R
ES
IS
T
AN
C
E (
)
DS
(O
N)
Ω
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 0.4 0.8 1.2 1.6 2.0
Fig. 5 Typical On-Resistance
vs. Drain Current and Gate Voltage
-I , DRAIN-SOURCE CURRENT (A)
D
V = -2.5V
GS
V = -4.5V
GS
V = -1.8V
GS
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0 0.4 0.8 1.2 1.6 2.0
-I , DRAIN CURRENT (A)
D
Fig. 6 Typical On-Resistance
vs. Drain Current and Temperature
R
,
D
R
AI
N-
S
O
U
R
C
E
O
N-
R
ESI
S
T
AN
C
E (
)
DS
(O
N)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = -4.5V
GS
0.5
0.7
0.9
1.1
1.3
1.5
1.7
Fig. 7 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R
, DR
AI
N-
SOURCE
O
N
-R
ESI
ST
ANC
E
(
N
O
R
M
A
L
IZ
E
D)
DS
O
N
V = -2.5V
I = -250mA
GS
D
V = -5.0V
I = -500mA
GS
D
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
T
A
N
C
E (
)
DS
O
N
Ω
Fig. 8 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
V = -5.0V
I = -500mA
GS
D
V = -2.5V
I = -250mA
GS
D
0
0.2
0.4
0.6
0.8
1.0
1.2
-V
,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V
)
GS
(T
H
)
1.4
Fig. 9 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
I = -1mA
D
I = -250µA
D
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.4 0.6 0.8 1.0 1.2
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
Fig. 10 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD