Diodes DMS2095LFDB - Manual (Page 3)

DMS2095LFDB
Document number: DS35955 Rev. 3 - 2
3 of 7
www.diodes.com
April 2014
© Diodes Incorporated
DMS2095LFDB
NEW PROD
UC
T
Electrical Characteristics – P-CHANNEL MOSFET – Q1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-20 ⎯ ⎯ V V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 μA V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±800 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-0.4 ⎯ -1.3 V V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance R
DS (ON)
⎯
⎯
⎯ 48
65
90 95
120
150 m Ω
V
GS
= -4.5V, I
D
= -2.8A
V
GS
= -2.5V, I
D
= -2.0A
V
GS
= -1.8V, I
D
= -1.0A
Diode Forward Voltage V
SD
⎯ -0.42 -1.2 V V
GS
= 0V, I
S
= -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 561 ⎯ pF
V
DS
= -10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 78 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 66 ⎯ pF
Gate Resistance R
g
⎯ 59.5 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge Q
g
⎯ 7.0 ⎯ nC
V
GS
= -4.5V, V
DS
= -10V,
I
D
= -2.5A
Gate-Source Charge Q
gs
⎯ 0.9 ⎯ nC
Gate-Drain Charge Q
gd
⎯ 1.7 ⎯ nC
Turn-On Delay Time t
D(on)
⎯ 5.3 ⎯ ns
V
DD
= -10V, V
GS
= -4.5V,
R
L
= 4Ω, R
G
= 6Ω
Turn-On Rise Time t
r
⎯ 5.8 ⎯ ns
Turn-Off Delay Time t
D(off)
⎯ 69 ⎯ ns
Turn-Off Fall Time t
f
⎯ 54 ⎯ ns
Reverse Recovery Time t
rr
⎯ 12.4 ⎯ ns
I
F
= -2.5A, di/dt = 100A/μs
Reverse Recovery Charge Q
rr
⎯ 3.7 ⎯ nC
Electrical Characteristics – SCHOTTKY – D1
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 8) V
(BR)R
20 35 ⎯ V I
R
= 1mA
Forward Voltage (Note 8) V
F
⎯
⎯ —
— 0.40
0.47
V
I
F
= 0.5A
I
F
= 1.0A
Reverse Current (Note 8) I
R
⎯ 30 80 μA V
R
= 20V
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing