Dms2095lfdb new prod uc t, Mosfet characteristics, Dms2095lfdb – Diodes DMS2095LFDB User Manual
Page 5
DMS2095LFDB
Document number: DS35955 Rev. 3 - 2
5 of 7
April 2014
© Diodes Incorporated
DMS2095LFDB
NEW PROD
UC
T
MOSFET Characteristics
(cont.)
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
TE
T
H
R
ESH
O
LD
V
O
LT
A
G
E (
V
)
GS
(TH
)
0
0.2
0.4
0.6
0.8
1
-50
-25
0
25
50
75
100
125
150
-I = 1mA
D
-I = 250µA
D
V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
I,
S
O
U
R
C
E
C
U
R
R
E
N
T (A
)
S
0
1
2
3
4
5
6
7
8
9
10
0
0.3
0.6
0.9
1.2
1.5
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
T = -55 C
A
°
T = 25 C
A
°
C
, J
UNCT
IO
N
CA
P
A
CI
TA
N
C
E (p
F
)
T
V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
10
100
1000
10000
0
2
4
6
8
10
12 14
16 18
20
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
V,
G
A
T
E
-S
O
U
R
C
E
V
O
LT
A
G
E
(V
)
GS
0
1
2
3
4
5
6
7
8
9
10
0
3
6
9
12
15
V
= -10V
I = -2.5A
DS
D
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
r(
t), T
R
AN
S
IE
NT
T
H
E
R
M
AL
R
E
S
IS
TA
N
C
E
D = 0.7
D = 0.9
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R
(t) = r(t) * R
R
= 155°C/W
Duty Cycle, D = t1/ t2
θ
θ
θ
JA
JA
JA
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000