Dmg302pu new prod uc t, Maximum ratings, Thermal characteristics – Diodes DMG302PU User Manual

Page 2: Electrical characteristics, Dmg302pu

Advertising
background image

DMG302PU

Document number: DS36227 Rev. 2 - 2

2 of 6

www.diodes.com

May 2014

© Diodes Incorporated

DMG302PU

NEW PROD

UC

T




Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Value

Units

Drain-Source Voltage

V

DSS

-25 V

Gate-Source Voltage

V

GSS

-8 V

Continuous Drain Current (Note 6) V

GS

= -4.5V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-0.17
-0.14

A

Continuous Drain Current (Note 6) V

GS

= -2.7V

Steady

State

T

A

= +25°C

T

A

= +70°C

I

D

-0.15
-0.12

A

Pulsed Drain Current T

P

≤ 300µs, Duty Cycle = 2%)

I

DM

-0.5 A



Thermal Characteristics

Characteristic Symbol

Value

Units

Total Power Dissipation

(Note 5)

P

D

0.33

W

(Note 6)

0.45

Thermal Resistance, Junction to Ambient

(Note 5)

R

θJA

376

°C/W

(Note 6)

275

Thermal Resistance, Junction to Case

(Note 6)

R

θJC

81

Operating and Storage Temperature Range

T

J,

T

STG

-55 to +150

°C



Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)

Characteristic Symbol

Min

Typ

Max

Unit

Test

Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-25

V

V

GS

= 0V, I

D

= -250µA

Zero Gate Voltage Drain Current

I

DSS

-1 µA

V

DS

= -20V, V

GS

= 0V

Gate-Source Leakage

I

GSS

-100 nA

V

GS

= -8V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-0.65 -0.96 -1.5 V V

DS

= V

GS

, I

D

= -250µA

Static Drain-Source On-Resistance

R

DS(ON)

2.5 10

Ω

V

GS

= -4.5V, I

D

= -0.2A

3 13

V

GS

= -2.7V, I

D

= -0.05A

Forward Transfer Admittance

|Y

fs

|

189

ms

V

DS

= -5V, I

D

= -0.2A

Diode Forward Voltage (Note 7)

V

SD

-1.5 V

V

GS

= 0V, I

S

= -0.2A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

27.2

pF

V

DS

= -10V, V

GS

= 0V

f = 1.0MHz

Output Capacitance

C

oss

6.1

Reverse Transfer Capacitance

C

rss

1.7

Total Gate Charge

Q

g

0.35

nC

V

DS

= -5V, I

D

= -0.2A,

V

GS

= -4.5V,

Gate-Source Charge

Q

gs

0.08

Gate-Drain Charge

Q

gd

0.06

Turn-On Delay Time

t

d(on)

4.5

ns

V

GS

= -4.5V, V

DD

= -6V

I

D

= -0.2A, R

G

= 50Ω

Rise Time

t

r

2.3

Turn-Off Delay Time

t

d(off)

24.1

Fall Time

t

f

11.0

Notes:

5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to production testing.






Advertising