Diodes DMG302PU - Manual (Page 4)

DMG302PU
Document number: DS36227 Rev. 2 - 2
4 of 6
www.diodes.com
May 2014
© Diodes Incorporated
DMG302PU
NEW PROD
UC
T
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25 C
A
°
0
0.2
0.4
0.6
0.8
1
0 0.3 0.6 0.9 1.2 1.5
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
1
10
100
0 5 10 15 20 25
C
oss
C
rss
f = 1MHz
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate-Charge Characteristics
g
-V
, G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
V = -5V
I = -200mA
DS
D
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIMES (sec)
Figure 11 Transient Thermal Resistance
0.001
0.01
0.1
r(t),
T
R
A
N
SI
E
N
T
T
H
E
R
MA
L
R
ESI
S
TA
N
C
E
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
Single Pulse
R (t) = r(t) * R
R = 373°C/W
Duty Cycle, D = t1/ t2
θ θ
θ
JA JA
JA