Dmg2307l new prod uc t, Dmg2307l – Diodes DMG2307L User Manual
Page 4
DMG2307L
Document number: DS35414 Rev. 3 – 2
4 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMG2307L
NEW PROD
UC
T
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
A
V
, GA
T
E
THRE
SHOL
D VO
LT
AG
E(V
)
GS
(T
H
)
0
0.4
0.8
1.2
1.6
2
I
, SOU
RCE
CURRENT
(
A
)
S
V , SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
2
4
6
8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
p
F
)
T
C
ISS
C
OSS
C
RSS
10
100
1000
0
5
10
15
20
25
30
f = 1MHz
V , DRAIN-SOURCE VOLTAGE(V)
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
DS
I
, L
EAK
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
0.1
1
10
100
1000
10000
0
5
10
15
20
25
30
T =150°C
A
T =125°C
A
T =85°C
A
T =25°C
A
0
2
4
6
8
10
Q , TOTAL GATE CHARGE (nC)
Fig. 11 Gate-Charge Characteristics
g
V
, G
A
TE-
S
O
U
RC
E VO
LT
AG
E
(
V
)
GS
0
2
4
6
8
10
0.1
1
10
100
-V , DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 12 SOA, Safe Operation Area
0.01
0.1
1
10
100
-I
, DRA
IN
CURRE
NT
(
A
)
D
T
= 150 C
T = 25 C
Single Pulse
J(MAX)
A
R
Limited
DS(ON)
-I (A) @P =10s
D
W
-I (A) @ DC
D
-I (A) @P =1s
D
W
-I (A) @P =100ms
D
W
-I (A) @P =10ms
D
W
-I (A) @P =1ms
D
W
-I (A) @
P =10µs
D
W
-I
(A) @
P
=10
0µs
D
W