Diodes DMP3010LK3 - Manual (Page 2)

DMP3010LK3
Document number: DS35716 Rev. 4 - 2
2 of 7
www.diodes.com
February 2012
© Diodes Incorporated
DMP3010LK3
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 4) V
GS
= -10V
Steady
State
T A = 25°C
T
A
= 70°C
I D
-17.0
-13.0
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-27.0
-21.0
A
Continuous Drain Current (Note 4) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T A = 70°C
I D
-14.5
-11.5
A
t<10s
T
A
= 25°C
T
A
= 70°C
I
D
-23.0
-18.0
A
Pulsed Drain Current (10 μs pulse, duty cycle = 1%) I
DM
-100 A
Maximum Body Diode Forward Current (Note 4) I S
5.5 A
Avalanche Current (Note 5) I
AS
47 A
Avalanche Energy (Note 5) E
AS
113 mJ
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 3) P
D
1.7 W
Thermal Resistance, Junction to Ambient (Note 3)
Steady state
R θJA
72 °C/W
t<10s 29 °C/W
Total Power Dissipation (Note 4) P
D
3.4 W
Thermal Resistance, Junction to Ambient (Note 4)
Steady state
R θJA
37 °C/W
t<10s 15 °C/W
Operating and Storage Temperature Range T J, T STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-30 ⎯ ⎯ V V
GS
= 0V, I
D
= -250 μA
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ -1 µA V DS = -30V, V GS = 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-1.1 -1.6 -2.1 V V
DS
= V
GS
, I
D
= -250
μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 6.5 8
m
Ω
V
GS
= -10V, I
D
= -10A
⎯ 7.2 10.2 V
GS
= -4.5V, I
D
= -10A
Forward Transfer Admittance |Y
fs
|
⎯ 30 ⎯ S V
DS
= -15V, I
D
= -10A
Diode Forward Voltage V
SD
⎯ -0.65 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C
iss
⎯ 6234 ⎯
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 1500 ⎯
Reverse Transfer Capacitance C
rss
⎯ 774 ⎯
Gate Resistance R G
⎯ 1.28 ⎯ Ω
V DS = 0V, V GS = 0V, f = 1.0MHz
Total Gate Charge Q
g
⎯ 59.2 ⎯
nC
V
DS
= -15V, V
GS
= -4.5V,
I
D
= -10A
Gate-Source Charge Q
gs
⎯ 16.1 ⎯
Gate-Drain Charge Q gd
⎯ 15.7 ⎯
Turn-On Delay Time t
D(on)
⎯ 11.4 ⎯
ns
V
DS
= -15V, V
GEN
= -10V,
R
G
= 6 Ω, I
D
= -1A
Turn-On Rise Time t
r
⎯ 9.4 ⎯
Turn-Off Delay Time t
D(off)
⎯ 260.7 ⎯
Turn-Off Fall Time t
f
⎯ 99.3 ⎯
Notes: 3. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
4. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
5 .UIS in production with L = 0.1mH, T
J
= 25°C
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.