Diodes DMP3010LK3 - Manual (Page 4)

DMP3010LK3
Document number: DS35716 Rev. 4 - 2
4 of 7
www.diodes.com
February 2012
© Diodes Incorporated
DMP3010LK3
0
0.5
1.0
1.5
2.0
2.5
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
-V
, G
A
TE
T
H
RESHO
L
D VO
L
T
A
G
E
(
V
)
GS
(T
H
)
I = -1mA
D
I = -250µA
D
0
5
10
15
20
25
30
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Fig. 8 Diode Forward Voltage vs. Current
-V , SOURCE-DRAIN VOLTAGE (V)
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 25°C
A
0 4 8 12 16 20
Fig. 9 Typical Total Capacitance
-V , DRAIN-SOURCE VOLTAGE (V)
DS
100
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
iss
C
rss
C
oss
f = 1MHz
0 5 10 15 20 25 30
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
-V , DRAIN-SOURCE VOLTAGE (V)
DS
1
10
100
1,000
100,000
-I
, L
EAKA
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
10,000
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
0 20 40 60 80 100 120 140
Q , OTAL GATE CHARGE (nC)
Fig. 11 Gate-Source Voltage vs. Total Gate Charge
g
T
0
2
4
6
8
10
-V
, A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E(
V
)
GS
G
V = -15V
I = -10A
DS
D
0
10
20
30
40
50
60
70
80
90
100
0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (sec)
Fig. 12 Single Pulse Maximum Power Dissipation
P
,
P
EAK
T
R
A
N
SI
E
N
T
P
O
WE
R
(W
)
(p
k
)
Single Pulse
R
= 72°C/W θJA
R (t) = r(t) * R
= P * R
θ θ
θ
JA JA
J A JA
T - T