Electrical characteristics, Dmp3035sfg – Diodes DMP3035SFG User Manual

Page 3

Advertising
background image

POWERDI is a registered trademark of Diodes Incorporated

DMP3035SFG

Document number: DS35440 Rev. 3 - 2

3 of 7

www.diodes.com

May 2012

© Diodes Incorporated

DMP3035SFG

ADVAN

CE I

N

F

O

RM

ATI

O

N





0.00001

0.0001

0.001

0.01

0.1

1

10

100

1,000

t1, PULSE DURATION TIMES (sec)

Fig. 3 Transient Thermal Resistance

0.001

0.01

0.1

r(t

),

T

R

ANS

IEN

T

T

H

E

R

MA

L

R

ESI

S

T

AN

C

E

1

R

(t) = r(t) * R

θ

θ

JA

JA

R

= 54°C/W

Duty Cycle, D = t1/ t2

θJA

D = 0.7

D = 0.9

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse






Electrical Characteristics

T

A

= 25°C unless otherwise specified

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage

BV

DSS

-30 - - V

V

GS

= 0V, I

D

= -250

μA

Zero Gate Voltage Drain Current

I

DSS

- -

-1.0

μA

V

DS

= -30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

- -

±100

nA

V

GS

= ±25V, V

DS

= 0V

ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage

V

GS(th)

-1.0 -1.7 -2.5 V

V

DS

= V

GS

, I

D

= -250

μA

Static Drain-Source On-Resistance

R

DS (ON)

- 15 20

m

V

GS

= -10V, I

D

= -8A

- 21 29

V

GS

= -5V, I

D

= -5A

Forward Transfer Admittance

|Y

fs

|

- 22 - S

V

DS

= -5V, I

D

= -10.0A

Diode Forward Voltage

V

SD

- -0.74

-1.0 V

V

GS

= 0V, I

S

= -1A

DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance

C

iss

- 1633 - pF

V

DS

= -15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

- 459 - pF

Reverse Transfer Capacitance

C

rss

- 214 - pF

Gate Resistance

R

g

- 6.5 13

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge V

GS

= -4.5V

Q

g

- 17 - nC

V

DS

= -15V, V

GS

= -10V, I

D

= 8A

Total Gate Charge V

GS

= -10V

Q

g

- 35.5 - nC

Gate-Source Charge

Q

gs

- 4.6 - nC

Gate-Drain Charge

Q

gd

- 5.7 - nC

Turn-On Delay Time

t

D(on)

- 8.5 - ns

V

GEN

= -10V, V

DD

= -15V,

R

GEN

= 3

Ω, I

D

= -15A

Turn-On Rise Time

t

r

- 14 - ns

Turn-Off Delay Time

t

D(off)

- 50 - ns

Turn-Off Fall Time

t

f

- 25.8 - ns

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.






Advertising