Diodes DMP3035SFG User Manual
Page 5
POWERDI is a registered trademark of Diodes Incorporated
DMP3035SFG
Document number: DS35440 Rev. 3 - 2
5 of 7
May 2012
© Diodes Incorporated
DMP3035SFG
ADVAN
CE I
N
F
O
RM
ATI
O
N
-50
-25
0
25
50
75
100
125 150
T , AMBIENT TEMPERATURE (°C)
Fig. 10 Gate Threshold Variation vs. Ambient Temperature
A
0
0.5
1.0
1.5
2.0
2.5
3.0
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E(
V)
GS
(T
H
)
0.4
0.6
0.8
1.0
1.2
-V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 11 Diode Forward Voltage vs. Current
SD
0
5
10
15
20
25
30
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
5
10
15
20
100
1,000
10,000
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 12 Typical Junction Capacitance
DS
C
oss
C
rss
f = 1MHz
C
iss
0
4
8
12
16
20
-V
, DRAIN-SOURCE VOLTAGE(V)
Fig. 13 Typical Drain-Source Leakage Current vs. Voltage
DS
1
10
100
1,000
10,000
-I
, L
E
A
K
A
G
E
C
U
R
R
EN
T
(n
A
)
DS
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
0
5
10
15
20
25
30
35
40
Q , TOTAL GATE CHARGE (nC)
Fig. 14 Gate-Charge Characteristics
g
0
2
4
6
8
10
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
L
T
A
G
E (
V
)
GS