Dmp3105lvt new prod uc t, Dmp3105lvt – Diodes DMP3105LVT User Manual
Page 4
DMP3105LVT
Document number: DS35504 Rev. 2 - 2
4 of 6
November 2011
© Diodes Incorporated
DMP3105LVT
NEW PROD
UC
T
-50
-25
0
25
50
75
100
125
150
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
L
T
A
G
E (
V)
GS
(t
h
)
T , JUNCTION TEMPERATURE ( C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
J
°
0
0.2
0.4
0.6
0.8
1
1.2
I = -250µA
D
I = -1mA
D
1.4
I
, SOURC
E CURRE
NT
(
A
)
S
V
, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
SD
0
4
8
12
16
20
0.4
0.6
0.8
1
1.2
T = 25 C
A
°
V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Drain-Source Leakage Current vs. Voltage
DS
I
, L
EAKA
G
E
C
U
R
R
E
N
T
(n
A
)
DS
S
1
10
100
1000
10000
100000
0
5
10
15
20
25
30
T =
A
25 C
°
T =
A
85 C
°
T = 150 C
A
°
-V
, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
10
100
1000
10000
0
5
10
15
20
25
30
f = 1MHz
C
RSS
C
ISS
C
OSS
Q -(nC)
Fig. 11 Gate Charge Characteristics
G
V(
V
)
GS
0
2
4
6
8
10
0
5
10
15
20
-V
, DRAIN-SOURCE VOLTAGE (V)
DS
Fig. 12 SOA, Safe Operation Area
0.01
0.1
1
10
100
I
, D
RAIN CU
RRENT
(
A
)
D
0.01
0.1
1
10
100
I (A) @P =10s
D
W
I (A) @ DC
D
I (A) @P =1s
D
W
I (A) @P =100ms
D
W
I (A) @P =10ms
D
W
I (A) @P =1ms
D
W
I (A) @
P =10µs
D
W
I
(A
) @
P
=1
00
µs
D
W
T
= 150 C
T = 25 C
Single Pulse
J(MAX)
A
°
°
R
Limited
DS(ON)