Diodes DMP3105LVT - Manual (Page 2)

DMP3105LVT
Document number: DS35504 Rev. 2 - 2
2 of 6
www.diodes.com
November 2011
© Diodes Incorporated
DMP3105LVT
NEW PROD
UC
T
Maximum Ratings
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GSS
±12 V
Continuous Drain Current (Note 4) V GS = -10V
Steady
State
T A = 25°C
T
A
= 70°C
I D
3.1
2.5
A
Continuous Drain Current (Note 4) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
2.7
2.2
A
Continuous Drain Current (Note 5) V GS = -10V
Steady
State
T
A
= 25°C
T A = 70°C
I D
3.9
3.1
A
Continuous Drain Current (Note 5) V
GS
= -4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
3.3
2.7
A
Maximum Continuous Body Diode Forward Current I
S
2.2 A
Pulsed Drain Current (10us pulse, duty cycle=1%) I DM
20 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 4) P
D
1.15 W
Thermal Resistance, Junction to Ambient (Note 4) R θJA 108 °C/W
Total Power Dissipation (Note 5) P
D
1.75 W
Thermal Resistance, Junction to Ambient (Note 5) R θJA 72 °C/W
Thermal Resistance, Junction to Case (Note 5) R θJc 23.4 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BV
DSS
-30 ⎯ ⎯ V V
GS
= 0V, I
D
= -250
μA
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -100 nA V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
V
GS(th)
-0.5 -0.9 -1.5 V V
DS
= V
GS
, I
D
= -250 μA
Static Drain-Source On-Resistance R
DS (ON)
⎯ 65 75
m
Ω
V
GS
= -10V, I
D
= -4.2A
⎯ 75 98 V
GS
= -4.5V, I
D
= -4.0A
⎯ 98 150 V
GS
= -2.5V, I
D
= -3.0A
Forward Transfer Admittance |Y
fs
| ⎯ 5 ⎯ S V
DS
= -15V, I
D
= -4.0A
Diode Forward Voltage V SD
⎯ -0.7 -1.0 V V GS = 0V, I S = -1A
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
C iss
⎯ 839 ⎯
pF
V DS = -15V, V GS = 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ 47 ⎯
Reverse Transfer Capacitance C
rss
⎯ 43 ⎯
Gate Resistance R
G
⎯ 12.3 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
⎯ 9.0 ⎯
nC V DS = -15V, I D = -4.0A
Total Gate Charge (V
GS
= -10.0V) Q
g
⎯ 19.8 ⎯
Gate-Source Charge Q
gs
⎯ 1.6 ⎯
Gate-Drain Charge Q gd
⎯ 1.1 ⎯
Turn-On Delay Time t
D(on)
⎯ 9.7 ⎯
ns
V
GS
= -10V, V
DD
= -15V, R
G
= 6
Ω,
I
D
= -1A
Turn-On Rise Time t
r
⎯ 17.7 ⎯
Turn-Off Delay Time t D(off)
⎯ 269 ⎯
Turn-Off Fall Time t
f
⎯ 64 ⎯
Notes: 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate
6 .Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.