Diodes DMP6180SK3 - Manual (Page 2)

DMP6180SK3
Document number: DS36172 Rev. 3 - 2
2 of 6
www.diodes.com
July 2013
© Diodes Incorporated
DMP6180SK3
NEW PROD
UC
T
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-60 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 6) V GS = -10V
Steady
State
T C = +25°C
T
C
= +100°C
I D
-14
-10
A
Maximum Body Diode Forward Current (Note 6) I
S
4.1 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
25 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.7
W
T
A
= +70°C 1.0
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R JA
76
°C/W
t<10s 33
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
2.7
W
T
A
= +70°C 1.5
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R JA
50
°C/W
t<10s 24
Total Power Dissipation (Note 6)
T
C
= +25°C
P
D
40
W
T
C
= +100°C 16
Thermal Resistance, Junction to Case (Note 6) Steady state R JC 3.1 °C/W
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV DSS
-60   V V GS = 0V, I D = -250µA
Zero Gate Voltage Drain Current I
DSS
  -1 µA V
DS
= -48V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-1.2  -2.7 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
 60 110
m Ω
V
GS
= -10V, I
D
= -12A
 80 140 V GS = -4.5V, I D =-8A
Forward Transfer Admittance |Y
fs
|
 15  S V
DS
= -5V, I
D
= -12A
Diode Forward Voltage V
SD
 -0.7 -1.0 V V
GS
= 0V, I
S
= -1A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
 984.7 
pF V
DS
= -30V, V
GS
= 0V, f = 1.0MHz Output Capacitance C
oss
 58 
Reverse Transfer Capacitance C rss
 45.5 
Gate Resistance R
G
 12.9  Ω V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
 8.1 
nC

V
DS
= -30V, I
D
= -12A
Total Gate Charge (V GS = -10V) Q g
 17.1 
Gate-Source Charge Q
gs
 3.2 
Gate-Drain Charge Q
gd
 3.9 
Turn-On Delay Time t
D(on)
 5.9 
ns
V
GS
= -10V, V
DS
= -30V, R
GEN
= 3 Ω,
R L = 2.5 Ω
Turn-On Rise Time t
r
 21.2 
Turn-Off Delay Time t
D(off)
 30.9 
Turn-Off Fall Time t
f
 39.1 
Body Diode Reverse Recovery Time t rr
 19.9  ns I S = -12A, dI/dt = 100A/ μs
Body Diode Reverse Recovery Charge Q
rr
 1.7  nC I
S
= -12A, dI/dt = 100A/ μs
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.
7. Short duration pulse test used to minimize self-heating effect
8. Guaranteed by design. Not subject to production testing