Diodes DMP6180SK3 User Manual
Page 4
DMP6180SK3
Document number: DS36172 Rev. 3 - 2
4 of 6
July 2013
© Diodes Incorporated
DMP6180SK3
NEW PROD
UC
T
0.5
1
1.5
2
2.5
-50
-25
0
25
50
75
100
125
150
T , AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
A
-V
,
G
A
T
E
T
H
R
ES
H
O
L
D
V
O
L
T
A
G
E (
V)
GS
(T
H
)
I = -1mA
D
I = -250µA
D
0
5
10
15
20
25
30
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
-V
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
E
N
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0
5
10
15
20
25
30
35
40
-V
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DS
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
AN
C
E (
p
F
)
T
C
ISS
f = 1MHz
C
OSS
C
RSS
0
2
4
6
8
10
0
5
10
15
20
Q , TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge Characteristics
G
-V
,
G
A
T
E S
O
U
R
C
E V
O
L
T
A
G
E (
V)
GS
V
= -30V
I = -12A
DS
D
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
-V
, DRAIN-SOURCE VOLTAGE (V)
Figure 11 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A)
D
R
Limited
DS(on)
T
= 150°C
T = 25°C
V
= 10V
Single Pulse
J(max)
A
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P
= 10ms
W
P = 1ms
W
P = 100µs
W