Diodes DMP6250SE - Manual (Page 2)

DMP6250SE
Document Number DS36696 Rev. 1 - 2
2 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6250SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source voltage V
DSS
-60 V
Gate-Source voltage (Note 5) V
GS
±20 V
Continuous Drain current (Note 6) V
GS
= -10V
T
A
= +25°C
T
A
= +70°C
I
D
-2.1
-1.7
A
T
C
= +25°C
T
C
= +70°C
I
D
-6.1
-4.9
A
Maximum Body Diode Continuous Current I
S
-1.8 A
Pulsed Drain Current (10µs pulse, duty cycle = 1%) I
DM
-11 A
Single Pulsed Avalanche Current (Note 7) L = 0.1mH I
AS
-12 A
Single Pulsed Avalanche Energy (Note 7) L = 0.1mH E
AS
8 mJ
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.8
W
T
A
= +70°C 1.1
Thermal Resistance, Junction to Ambient (Note 6) R
θJA
69 °C/W
Total Power Dissipation (Note 6) T
C
= +25°C P
D
14 W
Thermal Resistance, Junction to Case (Note 6) R
θJC
8.7
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-60 ⎯ ⎯ V I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 µA V
DS
= -60V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1 ⎯ -3 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
⎯ ⎯
250
mΩ
V
GS
= -10V, I
D
= -1.0A
300 V
GS
= -4.5V, I
D
= -0.5A
Diode Forward Voltage V
SD
⎯ ⎯ -1.2 V V
GS
= 0V, I
S
= -2.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
⎯ 551 ⎯ pF
V
DS
= -30V, V
GS
= 0V
f= 1MHz
Output Capacitance C
oss
⎯ 25.7 ⎯ pF
Reverse Transfer Capacitance C
rss
⎯ 19.1 ⎯ pF
Gate Resistance R
g
⎯ 12.1 ⎯ Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Q
g
⎯ 4.8 ⎯ nC
V
DS
= -30V, I
D
= -2A
Total Gate Charge (VGS = -10V) Q
g
⎯ 9.7 ⎯ nC
Gate-Source Charge Q
gs
⎯ 1.5 ⎯ nC
Gate-Drain Charge Q
gd
⎯ 1.6 ⎯ nC
Turn-On Delay Time t
D(on)
⎯ 6.3 ⎯ ns
V
DS
= -30V, V
GS
= -10V,
R
G
= 50Ω, I
D
= -1A
Turn-On Rise Time t
r
⎯ 10.3 ⎯ ns
Turn-Off Delay Time t
D(off)
⎯ 91.4 ⎯ ns
Turn-Off Fall Time t
f
⎯ 39.8 ⎯ ns
Reverse recovery time t
rr
9.2 ⎯ ns
I
S
= -1A, di/dt= 100A/µs
Reverse recovery charge Q
rr
⎯ 3.9 ⎯ nC
Notes: 5. AEC-Q101 V
GS
maximum is ±16V.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep T
J
= 25°C
8. Short duration pulse test used to minimize self-heating effect.
9. For design aid only, not subject to production testing.