Diodes DMP6250SE - Manual (Page 4)

DMP6250SE
Document Number DS36696 Rev. 1 - 2
4 of 6
www.diodes.com
January 2014
© Diodes Incorporated
DMP6250SE
ADVAN
CE I
N
F
O
RM
ATI
O
N
NEW PROD
UC
T
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 7 On-Resistance Variation with Temperature
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(o
n
)
Ω
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
-50 -25 0 25 50 75 100 125 150
V = -10V
I = A
GS
D
-1.0
V = 5V
I = A
GS
D
-4.
-0.5
T , AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
A
V,
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
(T
H
)
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
-50 -25 0 25 50 75 100 125 150
-I = 1mA
D
-I = 250µA
D
-V , SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
SD
-I
, S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
0
1
2
3
4
5
6
7
8
9
10
0 0.3 0.6 0.9 1.2 1.5
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (p
F
)
T
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
DS
10
100
1000
0 5 10 15 20 25 30 35 40
f = 1MHz
C
oss
C
rss
C
iss
Q , TOTAL GATE CHARGE (nC)
Figure 11 Gate-Charge Characteristics
g
-V
,
G
A
T
E-
S
O
U
R
C
E V
O
LT
A
G
E (
V
)
GS
0
2
4
6
8
10
0 2 4 6 8 10
V = -30V
I = -2A
DS
D
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
E
N
T
(A
)
D
0.01
0.1
1
10
100
0.1 1 10 100
R
Limited
DS(on)
T = 150°C
T = 25°C
J(max)
A
V = -10V
Single Pulse
GS
DUT on 1 * MRP Board
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W