Diodes DMP10H400SK3 - Manual (Page 2)

DMP10H400SK3
Document number: DS35932 Rev. 4 - 2
2 of 6
www.diodes.com
December 2013
© Diodes Incorporated
DMP10H400SK3
NEW PROD
UC
T
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage V
DSS
-100 V
Gate-Source Voltage V
GSS
±20 V
Continuous Drain Current (Note 4) V
GS
= -10V
Steady
State
T
C
= +25°C
I
D
-9
A
T
C
= +100°C -5.5
Maximum Body Diode Forward Current (Note 4) I
S
-4 A
Pulsed Drain Current (10μs pulse, duty cycle = 1%) I
DM
-15 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 4)
T
C
= +25°C
P
D
42
W
T
C
= +100°C 17
Thermal Resistance, Junction to Ambient (Note 4) R
θJA
44
°C/W
Thermal Resistance, Junction to Case (Note 4) R
θJC
3
Operating and Storage Temperature Range T
J,
T
STG
-55 to +150 °C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
BV
DSS
-100   V V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current I
DSS
  -1 µA V
DS
= -80V, V
GS
= 0V
Gate-Source Leakage I
GSS
  ±100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
V
GS(th)
-1  -3 V V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance R
DS (ON)
 190 240
mΩ
V
GS
= -10V, I
D
= -5A
 210 300 V
GS
= -4.5V, I
D
=-5A
Diode Forward Voltage V
SD
 -0.7 -1.2 V V
GS
= 0V, I
S
= -5A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
C
iss
 1239 
pF V
DS
= -25V, V
GS
= 0V, f = 1MHz Output Capacitance C
oss
 42 
Reverse Transfer Capacitance C
rss
 28 
Gate Resistance R
G
 13  Ω V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= -4.5V) Q
g
 8.4 
nC  V
DS
= -60V, I
D
= -5A
Total Gate Charge (V
GS
= -10V) Q
g
 17.5 
Gate-Source Charge Q
gs
 2.8 
Gate-Drain Charge Q
gd
 3.2 
Turn-On Delay Time t
D(on)
 9.1 
ns V
DD
= -50V, R
G
= 9.1Ω, I
D
= -5A
Turn-On Rise Time t
r
 14.9 
Turn-Off Delay Time t
D(off)
 57.4 
Turn-Off Fall Time t
f
 34.4 
Body Diode Reverse Recovery Time t
rr
 25.2  ns V
GS
= 0V, I
S
= -5A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge Q
rr
 24.5  nC V
GS
= 0V, I
S
= -5A, dI/dt = 100A/μs
Notes: 4. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout
5. Short duration pulse test used to minimize self-heating effect
6. Guaranteed by design; not subject to production testing