Diodes DMC2020USD - Manual

DMC2020USD
Document number: DS32121 Rev. 4 - 2
1 of 11
www.diodes.com
February 2011
© Diodes Incorporated
DMC2020USD
A Product Line of
Diodes Incorporated
20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device V
(BR)DSS
R
DS(on)
max
I
D
Max
T
A
= 25
°C
(Notes 3 & 5)
Q1 20V
20m
Ω @ V
GS = 4.5V 8.5A
28m Ω @ V
GS
= 2.5V 7.2A
Q2 -20V
33m
Ω @ V
GS
= -4.5V -6.8A
45m
Ω @ V
GS = -2.5V -5.8A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Motor control
• DC-DC
Converters
•
Power management functions
• Notebook Computers and Printers
Features and Benefits
• Reduced footprint with two discretes in a single SO8
• Low gate drive
•
Low input capacitance
•
Fast Switching Speed
• Low Input/Output Leakage
• ESD Protected up to 2kV
•
“Lead Free”, RoHS Compliant (Note 1)
•
Halogen and Antimony Free. "Green" Device (Note 1)
Mechanical Data
• Case: SO-8
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
Ordering Information
(Note 1)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
DMC2020USD-13 C2020UD 13 12 2,500
Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com.
Marking Information
SO-8
Top View
Top View
D1 S1
G1
S2
G2
D1
D2
D2
Equivalent Circuit
C2020UD
YY WW
= Manufacturer’s Marking
C2020UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01 - 53)
ESD PROTECTED TO 2kV
Q1 N-Channel Q2 P-Channel
Source
Gate
Drain
Body
Diode
Gate
Protection
Diode
Source
Gate
Drain
Body
Diode
Gate
Protection
Diode