Electrical characteristics – q1 n-channel, Typical characteristics – q1 n-channel, Dmc2020usd – Diodes DMC2020USD User Manual
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DMC2020USD
Document number: DS32121 Rev. 4 - 2
4 of 11
February 2011
© Diodes Incorporated
DMC2020USD
A Product Line of
Diodes Incorporated
Electrical Characteristics – Q1 N-CHANNEL
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
20 - - V
V
GS
= 0V, I
D
= 250
μA
Zero Gate Voltage Drain Current
I
DSS
- -
1.0
μA
V
DS
= 20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
- -
±10
μA
V
GS
= ±10V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
0.5 1.1 1.5 V
V
DS
= V
GS
, I
D
= 250
μA
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
-
13 20
m
Ω
V
GS
= 4.5V, I
D
= 7A
18 28
V
GS
= 2.5V, I
D
= 3A
Forward Transfer Admittance (Notes 8 & 9)
|Y
fs
|
- 16 - S
V
DS
= 5V, I
D
= 9.4A
Diode Forward Voltage (Note 8)
V
SD
- 0.7
1.2 V
V
GS
= 0V, I
S
= 1.3A
Continuous Source Current
I
S
- -
1.8 A
-
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
- 1149 -
pF
V
DS
= 10V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
- 157 -
Reverse Transfer Capacitance
C
rss
- 142 -
Gate Resistance
R
g
- 1.51 -
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (Note 10)
Q
g
- 6.0 -
nC
V
GS
= 2.5V
V
DS
= 10V
I
D
= 9.4A
Total Gate Charge (Note 10)
Q
g
- 11.6 -
V
GS
= 4.5V
Gate-Source Charge (Note 10)
Q
gs
- 2.7 -
Gate-Drain Charge (Note 10)
Q
gd
- 3.4 -
Turn-On Delay Time (Note 10)
t
D(on)
-
11.67
-
Turn-On Rise Time (Note 10)
t
r
-
12.49
-
ns
V
GS
= 4.5V, V
DS
= 10V,
R
G
= 6
Ω
,
I
D
= 1A
Turn-Off Delay Time (Note 10)
t
D(off)
-
35.89
-
Turn-Off Fall Time (Note 10)
t
f
-
12.33
-
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.
Typical Characteristics – Q1 N-CHANNEL
0
5
10
15
20
25
30
0
0.5
1
1.5
2
Fig. 1 Typical Output Characteristics
V
, DRAIN-SOURCE VOLTAGE (V)
DS
I,
D
R
AI
N
C
U
R
R
EN
T
(A)
D
V
= 1.8V
GS
V
= 2.0V
GS
V
= 2.5V
GS
V
= 3.0V
GS
V
= 3.5V
GS
V
= 4.0V
GS
V
= 4.5V
GS
V
= 10V
GS
0
0.5
1
1.5
2
2.5
3
Fig. 2 Typical Transfer Characteristics
V
, GATE SOURCE VOLTAGE (V)
GS
0
5
10
15
20
I,
D
R
AI
N
C
U
R
R
EN
T
(A)
D
V
= 5V
DS
T = -55°C
A
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A